An ionic polymer route to a stable unpinning of the Fermi level of highly doped graphene

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dc.catalogadorvdr
dc.contributor.authorPradeepkumar, Aiswarya
dc.contributor.authorYang, Yang
dc.contributor.authorCastañeda Parra, Erik Alexander
dc.contributor.authorÁngel Figueroa, Felipe Alfonso
dc.contributor.authorIacopi, Francesca
dc.date.accessioned2025-06-19T20:18:32Z
dc.date.available2025-06-19T20:18:32Z
dc.date.issued2025
dc.description.abstractEpitaxial graphene on cubic silicon carbide on silicon could enable unique optical metasurface devices seamlessly integrated with CMOS technologies. However, one of the most promising methods to obtain large-scale epitaxial graphene on this challenging system typically leads to a highly p-type-doped graphene with a Fermi level pinned at ∼0.55 eV below the Dirac point. Hence, the use of conventional gate dielectric materials such as SiO2 and Si3N4 precludes the tuning of the graphene carrier concentration. We demonstrate that this limitation can be overcome with the use of polyethyleneimine (PEI) as a gate dielectric material for graphene field-effect transistors. We achieve significant tuning of the graphene's Fermi level, enabling ambipolar operation exceeding a 3 eV window. In addition, we demonstrate that excellent stability of the PEI-based devices can be achieved, thanks to the addition of a thin protective oxide film. These findings highlight the potential of ionic polymers for advancing reconfigurable graphene-based devices for photonic applications.
dc.fechaingreso.objetodigitalNo aplica
dc.format.extent9 páginas
dc.fuente.origenORCID
dc.identifier.doi10.1063/5.0271357
dc.identifier.eissn1089-7550
dc.identifier.urihttps://doi.org/10.1063/5.0271357
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/104717
dc.information.autorucEscuela de Química; Ángel Figueroa, Felipe Alfonso; 0000-0002-5099-3034; 142007
dc.information.autorucEscuela de Química; Castañeda Parra, Erik Alexander; 0000-0002-5099-3034; 205114
dc.language.isoen
dc.nota.accesoSin adjunto
dc.revistaJournal of Applied Physics
dc.rights.licenseCC BY 4.0 Attribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc510
dc.subject.deweyMatemática física y químicaes_ES
dc.subject.ods09 Industry, innovation and infrastructure
dc.subject.odspa09 Industria, innovación e infraestructura
dc.titleAn ionic polymer route to a stable unpinning of the Fermi level of highly doped graphene
dc.typeartículo
dc.volumen137
sipa.codpersvinculados142007
sipa.codpersvinculados205114
sipa.trazabilidadORCID;2025-06-16
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