Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si(100) substrate

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dc.contributor.authorBhuyan, H.
dc.contributor.authorFavre, M.
dc.contributor.authorValderrama, E.
dc.contributor.authorAvaria, G.
dc.contributor.authorChuaqui, H.
dc.contributor.authorMitchell, I.
dc.contributor.authorWyndham, E.
dc.contributor.authorSaavedra, R.
dc.contributor.authorPaulraj, M.
dc.date.accessioned2025-01-21T01:05:40Z
dc.date.available2025-01-21T01:05:40Z
dc.date.issued2007
dc.description.abstractWe report the investigation of high energy ion beam irradiation on Si (100) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm.
dc.fuente.origenWOS
dc.identifier.doi10.1088/0022-3727/40/1/003
dc.identifier.eissn1361-6463
dc.identifier.issn0022-3727
dc.identifier.urihttps://doi.org/10.1088/0022-3727/40/1/003
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/95988
dc.identifier.wosidWOS:000243150300021
dc.issue.numero1
dc.language.isoen
dc.pagina.final131
dc.pagina.inicio127
dc.revistaJournal of physics d-applied physics
dc.rightsacceso restringido
dc.titleFormation of hexagonal silicon carbide by high energy ion beam irradiation on Si(100) substrate
dc.typeartículo
dc.volumen40
sipa.indexWOS
sipa.trazabilidadWOS;2025-01-12
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