Exploring Memristor Multi-Level Tuning Dependencies on the Applied Pulse Properties via a Low Cost Instrumentation Setup

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dc.contributor.authorGomez, Jorge
dc.contributor.authorVourkas, Ioannis
dc.contributor.authorAbusleme, Angel
dc.date.accessioned2025-01-23T21:14:15Z
dc.date.available2025-01-23T21:14:15Z
dc.date.issued2019
dc.description.abstractDeeper understanding of memristive behavior is the only safe way towards maximum exploitation of the favorable properties and the analog nature of this new device technology in innovative applications. This can be achieved through experimental hands-on experience with real devices. However, lab experiments with memristors are a challenging step, especially for the uninitiated. In this direction, this paper presents some important considerations to carry out reliable measurements using an experimental setup composed of off-the-shelf components and an affordable data acquisition system. We specifically show how a transimpedance amplifier can be used to protect the memristor from damage via current compliance limiting, and allow full control over the voltage drop on its terminals. Using the proposed setup, a set of key experiments were carried out on commercial memristors from Knowm Inc., revealing fundamental dependencies of memristor state-tuning properties on the characteristics of the applied pulses and the initial conditions of the devices.
dc.fuente.origenWOS
dc.identifier.doi10.1109/ACCESS.2019.2915100
dc.identifier.issn2169-3536
dc.identifier.urihttps://doi.org/10.1109/ACCESS.2019.2915100
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/101028
dc.identifier.wosidWOS:000468739600001
dc.language.isoen
dc.pagina.final59421
dc.pagina.inicio59413
dc.revistaIeee access
dc.rightsacceso restringido
dc.subjectDigilent AD2
dc.subjectfeedback ammeter
dc.subjectinstrumentation
dc.subjectKnowm
dc.subjectmemristor
dc.subjectmulti-level memory
dc.subjectresistive switching
dc.subjectReRAM
dc.subjecttransimpedance amplifier
dc.titleExploring Memristor Multi-Level Tuning Dependencies on the Applied Pulse Properties via a Low Cost Instrumentation Setup
dc.typeartículo
dc.volumen7
sipa.indexWOS
sipa.trazabilidadWOS;2025-01-12
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