High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

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dc.contributor.authorNagy, Roland
dc.contributor.authorNiethammer, Matthias
dc.contributor.authorWidmann, Matthias
dc.contributor.authorChen, Yu-Chen
dc.contributor.authorUdvarhelyi, Peter
dc.contributor.authorBonato, Cristian
dc.contributor.authorHassan, Jawad Ui
dc.contributor.authorKarhu, Robin
dc.contributor.authorIvanov, Ivan G.
dc.contributor.authorNguyen Tien Son
dc.contributor.authorMaze, Jeronimo R.
dc.contributor.authorOhshima, Takeshi
dc.contributor.authorSoykal, Oney O.
dc.contributor.authorGali, Adam
dc.contributor.authorLee, Sang-Yun
dc.contributor.authorKaiser, Florian
dc.contributor.authorWrachtrup, Joerg
dc.date.accessioned2025-01-23T21:16:36Z
dc.date.available2025-01-23T21:16:36Z
dc.date.issued2019
dc.description.abstractScalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin-optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron-phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its (4)A(2) symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with similar to 1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.
dc.fuente.origenWOS
dc.identifier.doi10.1038/s41467-019-09873-9
dc.identifier.issn2041-1723
dc.identifier.urihttps://doi.org/10.1038/s41467-019-09873-9
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/101128
dc.identifier.wosidWOS:000465838600006
dc.language.isoen
dc.revistaNature communications
dc.rightsacceso restringido
dc.titleHigh-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
dc.typeartículo
dc.volumen10
sipa.indexWOS
sipa.trazabilidadWOS;2025-01-12
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