Influence of phonon dispersion on transient thermal response of silicon-on-insulator transistors under self-heating conditions

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dc.contributor.authorEscobar, Rodrigo A.
dc.contributor.authorAmon, Cristina H.
dc.date.accessioned2024-01-10T13:49:29Z
dc.date.available2024-01-10T13:49:29Z
dc.date.issued2007
dc.description.abstractLattice Boltzmann method (LBM) simulations of phonon transport are performed in one-dimensional (ID) and 2D computational models of a silicon-on- insulator transistor, in order to investigate its transient thermal response under Joule heating conditions, which cause a nonequilibrium region of high temperature known as a hotspot. Predictions from Fourier diffusion are compared to those from a gray LBM based on the Debye assumption, and from a dispersion LBM which incorporates nonlinear dispersion for all phonon branches, including explicit treatment of optical phonons without simplifying assumptions. The simulations cover the effects of hotspot size and heat pulse duration, considering a frequency-dependent heat source term. Results indicate that, for both models, a transition from a Fourier diffusion regime to a ballistic phonon transport regime occurs as the hotspot size is decreased to tens of nanometers. The transition is characterized by the appearance of-boundary effects, as well as by the propagation of thermal energy in the form of multiple, superimposed phonon waves. Additionally, hotspot peak temperature levels predicted by the dispersion LBM are found to be higher than those from Fourier diffusion predictions, displaying a nonlinear relation to hotspot size, for a given, fixed, domain size.
dc.fechaingreso.objetodigital2024-05-14
dc.format.extent8 páginas
dc.fuente.origenWOS
dc.identifier.doi10.1115/1.2717243
dc.identifier.eissn1528-8943
dc.identifier.issn0022-1481
dc.identifier.urihttps://doi.org/10.1115/1.2717243
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/79454
dc.identifier.wosidWOS:000248579200003
dc.information.autorucIngeniería;Escobar R;S/I;158663
dc.issue.numero7
dc.language.isoen
dc.nota.accesocontenido parcial
dc.pagina.final797
dc.pagina.inicio790
dc.publisherASME
dc.revistaJOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME
dc.rightsacceso restringido
dc.subjectconduction
dc.subjectelectronics
dc.subjectphonon transport
dc.subjectLBM
dc.subjectBTE
dc.subjectnanoscale
dc.subjectTRANSPORT
dc.subjectHOTSPOTS
dc.subjectCONDUCTION
dc.subject.ods07 Affordable and Clean Energy
dc.subject.odspa07 Energía asequible y no contaminante
dc.titleInfluence of phonon dispersion on transient thermal response of silicon-on-insulator transistors under self-heating conditions
dc.typeartículo
dc.volumen129
sipa.codpersvinculados158663
sipa.indexWOS
sipa.trazabilidadCarga SIPA;09-01-2024
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