CVD Growth of Hematite Thin Films for Photoelectrochemical Water Splitting: Effect of Precursor-Substrate Distance on Their Final Properties

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dc.contributor.authorFernandez-Izquierdo, Leunam
dc.contributor.authorSpera, Enzo Luigi
dc.contributor.authorDuran, Boris
dc.contributor.authorMarotti, Ricardo Enrique
dc.contributor.authorDalchiele, Enrique Ariel
dc.contributor.authordel Rio, Rodrigo
dc.contributor.authorHevia, Samuel A.
dc.date.accessioned2025-01-20T20:17:18Z
dc.date.available2025-01-20T20:17:18Z
dc.date.issued2023
dc.description.abstractThe development of photoelectrode materials for efficient water splitting using solar energy is a crucial research topic for green hydrogen production. These materials need to be abundant, fabricated on a large scale, and at low cost. In this context, hematite is a promising material that has been widely studied. However, it is a huge challenge to achieve high-efficiency performance as a photoelectrode in water splitting. This paper reports a study of chemical vapor deposition (CVD) growth of hematite nanocrystalline thin films on fluorine-doped tin oxide as a photoanode for photoelectrochemical water splitting, with a particular focus on the effect of the precursor-substrate distance in the CVD system. A full morphological, structural, and optical characterization of hematite nanocrystalline thin films was performed, revealing that no change occurred in the structure of the films as a function of the previously mentioned distance. However, it was found that the thickness of the hematite film, which is a critical parameter in the photoelectrochemical performance, linearly depends on the precursor-substrate distance; however, the electrochemical response exhibits a nonmonotonic behavior. A maximum photocurrent value close to 2.5 mA/cm(2) was obtained for a film with a thickness of around 220 nm under solar irradiation.
dc.fuente.origenWOS
dc.identifier.doi10.3390/molecules28041954
dc.identifier.eissn1420-3049
dc.identifier.urihttps://doi.org/10.3390/molecules28041954
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/92388
dc.identifier.wosidWOS:000941730000001
dc.issue.numero4
dc.language.isoen
dc.revistaMolecules
dc.rightsacceso restringido
dc.subjecthematite
dc.subjectchemical vapor deposition
dc.subjectthin film
dc.subjectwater splitting
dc.titleCVD Growth of Hematite Thin Films for Photoelectrochemical Water Splitting: Effect of Precursor-Substrate Distance on Their Final Properties
dc.typeartículo
dc.volumen28
sipa.indexWOS
sipa.trazabilidadWOS;2025-01-12
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